Determination of the Depth Scale in Sputter Depth Profiling
نویسندگان
چکیده
منابع مشابه
Sputter Depth Profiling by SIMS; Calibration of SIMS Depth Scale Using Multi-layer Reference Materials
In-depth distribution of doping elements in shallow depth region is an important role of secondary ion mass spectrometry (SIMS) for the development of next-generation semiconductor devices. KRISS has developed two types of multi-layer reference materials by ion beam sputter deposition. A multiple delta-layer reference material where the layers of one element are very thin can be used to evaluat...
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A molecular multilayer stack composed of alternating Langmuir-Blodgett films was analyzed by ToF-SIMS imaging in combination with intermediate sputter erosion using a focused C60+ cluster ion beam. From the resulting dataset, depth profiles of any desired lateral portion of the analyzed field-of-view can be extracted in retrospect, allowing the influence of the gating area on the apparent depth...
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A complex poly(vinylidene difluoride) (PVdF)/poly(methyl methacrylate) (PMMA) based coil coating formulation has been investigated using time-of-flight SIMS (ToFSIMS). Employing a Bi3 + analysis source and a Buckminsterfullerene (C60) sputter source, depth profiles were obtained through the polymeric materials in the outer few nanometres of the PVdF topcoat. These investigations demonstrate tha...
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Bombardment of molecular solids with polyatomic projectiles allows interrogation of the sample with reduced chemical damage accumulation. Hence, it is now common to perform depth profiling experiments using a variety of substrates in a fashion similar to that reported for inorganic materials in use for many decades. The possibility for chemical processes, however, creates a number of fundamenta...
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ژورنال
عنوان ژورنال: Journal of Surface Analysis
سال: 2002
ISSN: 1341-1756,1347-8400
DOI: 10.1384/jsa.9.306